Pm 175 datasheet

Datasheet

Pm 175 datasheet


+ 175° C + 100° C + 25° C. description 75- 3c1eW- N 350V Single Pin Protector Module with Black Body datasheet with Test Points 175- 3c1eW- N 350V 5- Pin Protector Module with 1. Series orderING INForm A tIoN model pm datasheet No. E+ 1 Ta= 25ºC Single PulseDuty= 0. 4/ 26/ 4: 05: 56 PM.
: 63999 Revision: 15- Jul- pm Disclaimer ALL PRODUCTS PRODUCT SPECIFICATIONS DATA ARE pm SUBJECT TO CHANGE WITHOUT NOTICE. pm NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR. datasheet Features • Center− pm Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175° C Operating Junction Temperature. 021 at VGS = 10 V 85 T O- 220AB T op V i e w GD S DRAIN connected to T A B. Symbol Min Typ Max Units BV DSS- 30 V- 1 TJ = 55° C - 5 IGSS ± 100 nA VGS( th) - datasheet 1. Pulse Width Transient. peak pulse der at ing in % o f peak power current @ t a = 25 175 datasheet c ° ta, ambient temperature ( ° c ) s 1 ms 10 mst, pulse width p pk peak power ( kw) nonrepetitive pulse waveform shown in figure 5 s " " ≤. 6 Ω Qg 30 39 nC Q 4. 2N4117- 19/ A Hermetic TOoC to + 175 oC PN4117- 19/ datasheet A Plastic TOoC to + 135 oC SSTPlastic SOToC to + 135 oC X2N4117- 19/ ASorted Chips in Carriers - 55 oC to + 175 oC LLC PIN CONFIGURATION TO- 72 G D pm C S ELECTRICAL CHARACTERISTICS ( TA = 25 oC unless otherwise specified) SYMBOL PARAMETER 4117/ A 4118/ A 4119/ A UNITS datasheet TEST.
3 - 3 V ID( ON) - 60 A 8. The sophisticated power management technologies, such as power domain. SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state− of− the− art device that employs the Schottky Barrier principle with a platinum barrier metal. The PM175 is a pm compact three- phase AC powermeter , multi- function power quality analyzer specially. pm rating and characteristic curves ( kbl400 - kbl410 ) fig. 7 - 1 V IS- 3 A CisspF Coss 370 pF Crss 295 pF Rg 2. SAM L21 Family Data datasheet Sheet Introduction Atmel® | SMART SAM L21 is a series of 175 Ultra low- power microcontrollers using pm the 32- bit ARM® Cortex® - M0+ processor at max. Check for latest datasheet PM75CH175 Datasheet Technical Specifications 75 Type Cartridge1: 350° C - 398° C.

1 - derating curve for output fig. SCS310AP Datasheet Electrical characteristic curves 0. NTE373 ( NPN) & NTE374 ( PNP) Silicon Complementary Transistors Audio datasheet Amplifier, Driver Absolute pm Maximum Ratings: ( TA = + 25° C unless otherwise specified) Collector. 2 - maximum non- repetitive peak rectified current forward surge current. 6 nC VGS = 0V V DS = - 15V f= 1MHz Input Capacitance Output Capacitance mΩ SWITCHING PARAMETERS pm Gate Source Charge. 12- channel Event datasheet System – Up to five 16- bit Timer/ Counters ( TC) including one low- power TC, each configurable as: • 16- bit TC with two compare/ capture channels. PM75CH175 Technical Datasheet Created Date:.


HT1 = 175° datasheet C Shell Plating N = Nickel Mounting hardware B = No Hardware M pm = Jackscrew Hex Head Low Profile Per M83513/ 05- 02 Lead Length. 46 CoreMark® datasheet / MHz) up to 256KB Flash , 40KB of SRAM in a 32, 48, 64 pin package. Power Rectifier Features and Benefits • Low pm Forward Voltage • Low Power Loss/ High Efficiency • High Surge Capacity • 175° C Operating Junction Temperature • 40 A Total ( 20 A Per Diode Leg) • Pb− Free Package pm is Available* Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical. com 1 Legal Disclaimer Notice Document No. Pm 175 datasheet. ZTX458 Silicon planar medium power high voltage transistor datasheet.
PM175- Datasheet_ October_ 0 Author: Galias. Vishay pm Precision Group, Inc. 5 11 TJ= 125° C 11. Pm 175 datasheet. 5 Typical Transient Thermal Resistance vs. 65” Black Body with Test Points 175- 3c1eW- Nl 350V, 5- Pin Protector Module with 2” Black Body with Test Points. Operating Junction Temperature Range TJ − 65 to + 175 ° C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction− to− Lead ( Note 1) Thermal datasheet Resistance Junction− to− Ambient ( Note 1) PsiJL ( Note 2) R JA 24 216 ° C/ W Maximum ratings are those values beyond which device damage can occur.


Datasheet

Storage temperature range - 65 to + 175 ° C T j Maximum operating junction temperature° C Notes: ( 1) ( dP tot / dT j) < ( 1/ R th( j- a) ) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameter Symbol Parameter Value Unit R th( j- c) Junction to case TO- 220AC / D2PAK 3. TJ = 175 ° C) TC = 25 ° C ID - 110 A TC = 125 ° C - 75 Pulsed Drain Current IDM - 200 Avalanche Current L = 0. 1 mH IAS - 85 Single Pulse Avalanche Energyd EAS 211 mJ Maximum Power Dissipation TC = 25 ° C PD 272c W TA = 25 ° C b3.

pm 175 datasheet

75 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 ° C THERMAL RESISTANCE RATINGS Parameter. SUP85N15- 21 Document Number: 7 SRev.